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| Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION With TO-3PFM package High speed switching High breakdown voltage APPLICATIONS Character display horizontal deflection output PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SC4747 Fig.1 simplified outline (TO-3PFM) and symbol Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC IC(surge) PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-surge Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 10 20 50 150 -55~150 ae ae UNIT V V V A A W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4747 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Fall time CONDITIONS IC=10mA ;RBE=0 IE=10mA ;IC=0 VCE=1500V; RBE=0 IC=1A ; VCE=5V IC=8A ; IB=1.6A IC=8A ; IB=1.6A ICP=7A;IB1=1.4A 8 MIN 800 6 0.5 30 5 1.5 0.3 |I V V s TYP. MAX UNIT V V mA SYMBOL V(BR)CEO V(BR)EBO ICES hFE VCE(sat) VBE(sat) tf JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4747 Fig.2 outline dimensions JMnic |
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